TSA20N50M 500v n-channel mosfet general description this power mosfet is produced using truesemi?s advanced planar stripe dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficiency sw itched mode power supplies, active power factor correction based on half bridge topology. features ? 20.0a, 500v, r ds(on) = 0.26 ? @v gs = 10 v ? low gate charge ( typical 70nc) ? high ruggedness ?fast switching ? 100% avalanche tested ? improved dv/dt capability absolute maximum ratings t c = 25cunless otherwise noted * drain current limited by maximum junction temperature. thermal characteristics symbol parameter TSA20N50M units v dss drain-source voltage 500 v i d drain current - continuous (t c = 25c) 20 a - continuous (t c = 100c) 13 a i dm drain current - pulsed (note 1) 80 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 1110 mj e ar repetitive avalanche energy (note 1) 28 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25c) 280 w - derate above 25c 2.3 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 " from case for 5 seconds 300 c symbol parameter typ max units r jc thermal resistance, junction-to-case - 0.44 c /w r cs thermal resistance, case-to-sink typ. 0.24 - c /w r ja thermal resistance, junction-to-ambient - 40 c /w to-3p or to247 { { { ? { { { ? s d g g s d free datasheet http:///
electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width li mited by maximum junction temperature 2. l = 5.0mh, i as = 20.0 a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 20.0 a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature symbol parameter test conditions min typ max units off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 500 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 0.5 -- v/c i dss zero gate voltage drain current v ds = 500 v, v gs = 0 v -- -- 1 a v ds = 400 v, t c = 125c -- -- 10 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2.0 -- 4. 5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 10.0a -- 0.21 0.26 ? dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 2700 -- pf c oss output capacitance -- 400 -- pf c rss reverse transfer capacitance -- 40 -- pf switching characteristics t d(on) turn-on delay time v dd = 250 v, i d = 20.0a, r g = 25 ? (note 4, 5) -- 100 -- ns t r turn-on rise time -- 400 -- ns t d(off) turn-off delay time -- 100 -- ns t f turn-off fall time -- 100 -- ns q g total gate charge v ds = 400 v, i d = 20.0a, v gs = 10 v (note 4, 5) -- 70 - nc q gs gate-source charge -- 18 -- nc q gd gate-drain charge -- 35 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 20.0 a i sm maximum pulsed drain-source diode forward current -- -- 80.0 a v sd drain-source diode forward voltage v gs = 0 v, i s = 20.0 a -- -- 1.5 v t rr reverse recovery time v gs = 0 v, i s = 20.0 a, di f / dt = 100 a/ s (note 4) -- 500 -- ns q rr reverse recovery charge -- 7.2 -- c TSA20N50M free datasheet http:///
typical characteristics figure 5. capacitance characteristics fi gure 6. gate charge characteristics figure 3. on-resistance variation vs figure 4. body diode forward voltage figure 2. transfer characteristics figure 1. on-region characteristics 10 -1 10 0 10 1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v notes : 1. 250 s pulse test 2. t c = 25 i d , drain current [a] v ds , drain-source voltage [v] 024681 0 10 -1 10 0 10 1 notes : 1. v ds = 50v 2. 250 s pulse test -55 150 25 i d , drain current [a] v gs , gate-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 10 -1 10 0 10 1 25 150 notes : 1. v gs = 0v 2. 250 s pulse test i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 1020304050607080 0.0 0.2 0.4 0.6 0.8 1.0 v gs = 20v v gs = 10v note : t j = 25 r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0 1020304050607080 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v ? note : i d = 20 a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 1000 2000 3000 4000 5000 6000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd ? notes : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] free datasheet http:///
typical characteristics (continued) figure 9. maximum safe operating area figure 7. breakdown voltage variation figure 8. on-resistance variation figure 10. maximum drain current vs case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : 1. v gs = 10 v 2. i d = 10.0 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 25 50 75 100 125 150 0 4 8 12 16 20 i d , drain current [a] t c , case temperature [ ] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] free datasheet http:///
c harge v gs 10v q g q gs q gd 3m a v gs dut v ds 300nf 50k 200nf 12v sam e type as d ut c harge v gs 10v q g q gs q gd 3m a v gs dut v ds 300nf 50k 200nf 12v sam e type as d ut v gs v ds 10% 90% t d (o n) t r t on t o ff t d (o ff) t f v dd 10v v ds r l dut r g v gs v gs v ds 10% 90% t d (o n) t r t on t o ff t d (o ff) t f v dd 10v v ds r l dut r g v gs e as =li as 2 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t ) i d (t) t im e 10v dut r g l i d t p e as =li as 2 ---- 2 1 e as =li as 2 ---- 2 1 ---- 2 1 -------------------- bv dss -v dd bv dss v dd v ds bv dss t p v dd i as v ds (t ) i d (t) t im e 10v dut r g l l i d i d t p gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms free datasheet http:///
dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( d riv e r ) i sd ( dut ) v ds ( d u t ) v dd body diode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g a te p u ls e w id th g ate pulse period -------------------------- dut v ds + _ driver r g sam e type as d u t v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( d riv e r ) i sd ( dut ) v ds ( d u t ) v dd body diode forw ard volta g e d ro p v sd i fm , b ody d iode forw ard c urrent b ody d iode r everse c urrent i rm b ody d iode r ecovery dv/dt di/dt d = g a te p u ls e w id th g ate pulse period -------------------------- d = g a te p u ls e w id th g ate pulse period -------------------------- peak diode recovery dv/dt test circuit & waveforms free datasheet http:///
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